Search results for "Semiconductor quantum well"
showing 4 items of 4 documents
Effects of rapid thermal annealing on the optical properties of low-loss 1.3μm GaInNAs∕GaAs saturable Bragg reflectors
2004
We report studies of the effect of rapid thermal annealing (RTA) on the optical properties of a low-loss 1.3 mum saturable Bragg reflector (SBR), consisting of a GaInNAs/GaAs single quantum well embedded in an AlAs/GaAs Bragg reflector grown monolithically on a GaAs substrate. RTA gives rise to a blueshift of the photoluminescence (PL) peak (and therefore of the excitonic absorption peak) and an enhancement of PL intensity, while the reflectivity properties including peak reflectivity and bandwidth are not degraded. Temperature dependent photoluminescence measurements show that the RTA-induced blueshift of photoluminescence consists of two components: one originating from the increase of op…
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.
Room-temperature efficient light detection by amorphous Ge quantum wells
2013
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%. © 2013 Cosentino et al.
Crystalline-Size Dependence of Dual Emission Peak on Hybrid Organic Lead-Iodide Perovskite Films at Low Temperatures
2018
In this work, we have investigated the crystalline-size dependence of optical absorption and photoluminescence emission of CH3NH3PbI3 films, which is necessary to identify the potential practical applications of the gadgets based on perovskite films. This study was carried out at low temperatures to minimize the extra complexity induced by thermal effects. The purpose was to clarify the origin of the dual emission peak previously reported in the literature. We found that the grain size is responsible for the appearance or disappearance of this dual emission on CH3NH3PbI3 at low temperatures, whereas we have inferred that the thickness of the perovskite layer is a much more important factor …